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A mathematical model based on an “aggregated-capacity” temperature analysis is presented and validated for predicting the temperature of thin polymeric films bonded to substrate materials. This model is applicable to coatings on metallic or other substrate materials when the ratio of the thermal resistance across the substrate to the resistance across the coating to ambient is less than approximately...
In this paper, bias-temperature instability (BTI) characterization on 45nm high-K + metal-gate (HK+MG) transistors is presented and degradation mechanism is discussed. Transistors with an unoptimized HK film stack in the early development phase exhibited pre-existing traps and large amount of hysteresis that was consistent with literature. The optimized and final HK process demonstrated NMOS and PMOS...
In this paper, we present extensive breakdown results on our 45nm HK+MG technology. Polarity dependent breakdown and SILC degradation mechanisms have been identified and are attributed gate and substrate injection effects. Processing conditions were optimized to achieve comparable TDDB lifetimes on HK+MG structures at 30% higher E-fields than SiON with a reduction in SILC growth. Extensive long-term...
Femtosecond, sub-ablation threshold UV photo-modification of poly(methyl methacrylate) is explored. Volatile fragment analysis (thermal desorption gas chromatography - mass spectrometry) and molecular weight distribution monitoring (size exclusion chromatography) suggest direct backbone cleavage and monomer formation.
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