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In this paper, a floating RESURF EDMOS (BV=55V, Ron,sp=36.5mOmega-mm2) with 400% enhanced Safe Operating Area (SOA) will be discussed and compared to the conventional EDMOS structure. The proposed EDMOS has both drain and source engineering to enhance SOA, not only via reducing the base resistance of the parasitic bipolar transistor, but also suppressing the base current of the parasitic bipolar transistor...
In this paper, a floating RESURF EDMOS (BV = 55 V, Ron,sp = 36.5 mOmegamiddotmm2) with 45% increased ruggedness and 400% enhanced safe operating area (SOA) is discussed and compared to the conventional EDMOS structure. The proposed EDMOS has both drain and source engineering to enhance device ruggedness, not only via reducing the base resistance of the parasitic bipolar transistor, but also suppressing...
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