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Extensive simulation experiments are carried out for the first time, to study the effects of photo-irradiation on the high frequency characteristics of III-V hexagonal GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5%...
Extensive simulation experiments are carried out to study the effects of optical illumination on the terahertz (>1.0 THz) characteristics of GaN-based IMPact Avalanche Transit Time (ATT) (IMPATT) oscillator. The shift of ATT phase delay, due to photogenerated carriers, in the top-mounted (TM) and flip-chip (FC) IMPATTs is also studied through a modified simulation scheme, for the first time. The...
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