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Extensive simulation experiments are carried out for the first time, to study the effects of photo-irradiation on the high frequency characteristics of III-V hexagonal GaN (Gallium Nitride) based Top-Mounted and Flip-Chip IMPATT oscillators at MM-wave window frequency (140.0 GHz). It is found that the un-illuminated GaN IMPATT is capable of delivering a RF power of 5.6 W with an efficiency of 23.5%...
Extensive simulation experiments are carried out to study the effects of optical illumination on the terahertz (>1.0 THz) characteristics of GaN-based IMPact Avalanche Transit Time (ATT) (IMPATT) oscillator. The shift of ATT phase delay, due to photogenerated carriers, in the top-mounted (TM) and flip-chip (FC) IMPATTs is also studied through a modified simulation scheme, for the first time. The...
The millimeter and sub-millimeter wavelength range for a long time has been used in many research applications. This frequency range has been utilized in spectroscopy, radio astronomy, plasma diagnostics, and the study of the earth's atmosphere. Even millimeter waves are now used in commercial applications as well, particularly in the security sector. An example of a solid-state source of this range...
The prospects of single drift region (SDR), flat profile GaN IMPATT diode as terahertz source are studied through a simulation experiment. The study indicates that GaN IMPATT device is capable of generating high RF power (PRF) of 14.4 W at around 0.7 THz with an efficiency of 20.0 %. The effects of photo-illumination on the GaN device is also investigated using a modified double iterative simulation...
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