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The electron field emission from Si tips coated with ultrathin nanocomposite SiO2(Si) films containing Si nanocrystals embedded into silicon dioxide matrix of varying thickness have been investigated. The peaks in emission current–voltage characteristics have been observed in case of some definite thicknesses of the films. The observed experimental results have been explained on base of resonance...
Photofield emission from SiGe nanoislands formed by molecular beam epitaxy (MBE) have been investigated. Two types of nanoislands, namely the domes and pyramids with different heights, have been addressed. It was found that the arrays of SiGe nanoislands exhibited a low onset voltage for field emission. The increase of emission current and the decrease of the curve slope in Fowler-Nordheim coordinates...
The electron field emission and photoassisted field emission from SiGe nanoisland formed by MBE growth are investigated. There are two types of nanoislands, namely the conical and pyramidal ones with different heights. Two slopes in emission current-voltage characteristics in Fowler-Nordheim coordinates were observed and is explained by emission from different SiGe nanoislands. The increase of emission...
The peculiarities of electron field emission from silicon based multilayer cathodes have been investigated. The structure under study was Si tip coated with SiO2-Si-SiO2 multilayer. The coating was formed by low pressure chemical vapor deposition of silicon enriched SiOx film (d=6.6 nm) and following thermal annealing. The electron distribution in silicon tip (3D) and quantum dot (1D) were taken into...
The peculiarities of electron field emission from Si cathodes with Si and SiGe nanoclusters have been investigated in details. To form Si nanoclusters on the flat surface or Si tips the LP CVD, IPS, or thermal evaporation methods were used for deposition of initial silicon enriched SiOx (x≤1.5) films in the thickness range 2–10 nm. In some cases the amorphous ultrathin Si film has been deposited....
New type of field emission resonant tunneling diode has been proposed and investigated as theoretically and experimentally. It based on Si-SiOx-Si multilayer cathode containing SiOx layer as input potential barrier, Si layer as quantum well and vacuum layer as output potential barrier of double barrier quantum structure. The calculation predicted the existence of the resonant maxima (three or four...
Magnetite Fe<sub>2</sub>O<sub>3</sub> whiskers are synthesized by thermal oxidation of a stainless steel substrate and identified as a single crystal extending in <110> direction by transmission electron microscopy. Field emission microscope (FEM) equipped with Mott polarization analyzer under pressure of 2times10-8 Pa are carried out to confirm the origin of Verwey transition...
In this paper we present a simple but powerful one-step growth method of ultra-long vertically aligned multi-walled CNT (MWNT) array, and its possible applications. Our growth method requires no additional process for catalyst thin film (pre-deposition), and only requires iron chloride powder and acetylene gas. We also present the results of electrical properties of MWNT array, such as electrical...
Field electron emission from silicon emitter is attractive one of electron source because not only it can be integrated with functional circuits, but also can be achieved high performance. The characteristic of field emission from silicon emitter, however, is different from metals: there is an obvious peak shift of the electron energy distribution (Si-EED) with external field. The surface states are...
In this paper, graphite nanospine cathode (GNS) were fabricated by plasma etching using microwave plasma CVD. In order to evaluate emission characteristics, a triode-type field emission X-ray tube was fabricated which was composed of GNS cathode, control electrode, and an anode. The anode current-voltage characteristics of X-ray tube was shown with respect to GNS cathode and control electrodes. This...
In this paper, a self-focusing field electron emitter was proposed and simulated with finite element method. In the electron emitter proposed, the gate electrode is placed on center and surrounded by cathode. Therefore, gate electrode is not only to extract the electron from cathode, but also to focus the electron beam. The simulated results show a significant decrease of the dispersion of electron...
Silicon electron field emitters may be attractive for numerous applications, mostly due to their compatibility with the dominating Si-based solid state microand nanoelectronics. The technology of nanostructure formation through a laser radiation (LR) on Si surface for the electron field emitter is proposed. N-type Si wafers are used in the experiments. The experiments were performed in an ambient...
In this paper, we show the emission current fluctuation of graphite nanoneedle cold cathode (GRANN) as a function of cathode temperature in the presence of various gases such as H2, CO, and He molecules. Field emission current measurements were performed in an atmosphere of the above gas (10-5-10-8 torr) over a temperature range of 300 to 1800 K. A high sensitivity quadrupole mass spectrometer was...
On the basis of previous research on optical modulation of Si FEAs, we present here, GaAs FEAs, their fabrication, experiment setup, and photo-response characteristics. Compare to silicon, GaAs is well known in optoelectronics, integrated optics, high frequency and ultra-fast electronic devices due to its high and direct band gap (1.41eV), and even fast electron mobility.
We have fabricated novel supper-induced graphite nanoneedle field emitters and Si electron- transparent films for application to electron-beam- pumped light sources. The field emitters exhibited a stable electron emission of 10 muA at an average field of 6V/ mum. The 1.5-mum-thick Si electron-transparent film with an aperture ratio of 75% achieved an electron transmittance of about 60% at an acceleration...
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