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Photofield emission from SiGe nanoislands formed by molecular beam epitaxy (MBE) have been investigated. Two types of nanoislands, namely the domes and pyramids with different heights, have been addressed. It was found that the arrays of SiGe nanoislands exhibited a low onset voltage for field emission. The increase of emission current and the decrease of the curve slope in Fowler-Nordheim coordinates...
The current transport through insulating SiO2 films with silicon nanocrystals in Si/SiO2(Si)/Al structures has been investigated in the wide range of temperatures (82–350 K). The nanocomposite SiO2(Si) films containing the silicon nanoclusters embedded into insulating SiO2 matrix have been obtained by ion-plasma sputtering of silicon target and subsequent high-temperature annealing. Based on the detailed...
GaN cathodes with nanometer-scale diameters were produced by plasma and photoelectrochemical etching of the structure formed on the n+-GaN substrate with n+-GaN top active layer. The values of band gap energy for GaN nanorods were determined by electro-reflectance modulation spectroscopy and are 3.374eV, 3.424eV, and 3.509eV for the light and heavy holes, respectively. The energy separation between...
The electron field emission and photoassisted field emission from SiGe nanoisland formed by MBE growth are investigated. There are two types of nanoislands, namely the conical and pyramidal ones with different heights. Two slopes in emission current-voltage characteristics in Fowler-Nordheim coordinates were observed and is explained by emission from different SiGe nanoislands. The increase of emission...
The peculiarities of electron field emission from silicon based multilayer cathodes have been investigated. The structure under study was Si tip coated with SiO2-Si-SiO2 multilayer. The coating was formed by low pressure chemical vapor deposition of silicon enriched SiOx film (d=6.6 nm) and following thermal annealing. The electron distribution in silicon tip (3D) and quantum dot (1D) were taken into...
The peculiarities of electron field emission from Si cathodes with Si and SiGe nanoclusters have been investigated in details. To form Si nanoclusters on the flat surface or Si tips the LP CVD, IPS, or thermal evaporation methods were used for deposition of initial silicon enriched SiOx (x≤1.5) films in the thickness range 2–10 nm. In some cases the amorphous ultrathin Si film has been deposited....
The electron field emission from Si-sponge nanostructures prepared by galvanic anodization of a Si wafer at low current density has been investigated. The reproducible resonant peaks have been revealed at the field emission induction and their origin was attributed with the Lorentzian dependence transmission functions. The sizes of the Si-quantum well and the SiO2 barrier have been estimated by simulating...
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