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The through-silicon via (TSV) structure with enhanced capacitance is proposed for the power distribution network in 3D ICs, where an n+ contact on the top surface surrounding the oxide-silicon interface of the power TSV is used, instead of a p-substrate. The n+ contact supplies the majority carrier to the channel, so the inversion layer can be formed at high frequencies. Since power TSVs are always...
Development of wireless technologies pushes for more accurate and more consistent EMC measurements. Antenna cross polarization is found to be a main contributor to the measurement errors. In this paper, full-wave analysis of E-field distribution of various slotlines is presented, which reveals that the bilateral tapered slot antenna has the widest impedance bandwidth and the lowest cross-polarization...
High-speed digital and wireless devices radiate unintentional electromagnetic noise, which can affect the normal operation of other devices within the same system, causing intra-system electromagnetic interference (EMI) problems, or contribute to the total radiated EMI from the system, resulting in potential system-level EMI issues. PCB and system level shielding may alleviate the system-level EMI...
A hybrid method is proposed for radio frequency interference (RFI) prediction of a metal enclosure with an aperture on the top wall. The structure is divided into several segments. While the fields in rectangular segments are described by cavity model, the segments with apertures are modeled by the commercial finite element solver (HFSS). Tangential field continuities along the common boundaries of...
Modern electronic systems may use mixed RF/digital technologies to achieve various functionalities, which leads to various intra-system interference problems including the RF interference from noisy digital circuits to sensitive RF receivers, especially when the overall system is contained in a metal enclosure. A fast method based on a cavity formulation can be used to estimate the internal noise...
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