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Interface-trap effects are analyzed in inversion-type, self-aligned In0.53Ga0.47As and In0.53Ga0.47As/ In0.2Ga0.8As MOSFETs with ALD ZrO2 gate dielectric. Interface-trap densities in the order of 1013 cm-2 eV-1 are required to explain the measured subthreshold slopes. For these Dit values, donor-like interface traps are compatible with threshold-voltage values in the 0-0.15 V range as those observed...
We review recent physics-based, compact models for thin film transistors (TFTs), including amorphous (a-Si), polysilicon (poly-Si), nanocrystalline silicon (nc-Si), and organic TFTs. The models accurately reproduce the DC characteristics for different geometries. We also present a universal TFT model paradigm, which allows to obtain a suitable estimation of TFT characteristics using only eight parameters,...
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