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The root cause of degradation and failure in nanoscale logic and memory devices originates from discrete defects (traps) that are created in the ultra-thin dielectrics during fabrication (process-induced) and / or voltage and temperature stress (stress-induced). In order to probe the chemistry of every discrete trap in terms of its bond state, charge state, physical location, region of influence,...
It has always been assumed all along that the percolation path in the high-κ (HK) and interfacial layer (IL) of dual layer dielectric stacks are perfectly aligned with each other. There is however no solid evidence to date to support this assumption because the standard stress levels applied and compliance chosen for time dependent dielectric breakdown (TDDB) tests is high enough to instantaneously...
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