Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
We report the formation of a new ferromagnetic (FM) states in the antiferromagnet (AFM) NiO at the interface with ferromagnet (FM) La0.7Ca0.3MnO3 (LCMO). The new magnetization temperature at 80 K is observed and can be ascribed to Ni3+-O-Mn3+ superexchange interactions. Mn 3s and Ni 3p core-level spectra have been measured by x-ray photoelectron spectroscopy (XPS) which show a direct evidence of charge...
The external electric field controlled the phase transition behavior for ferromagnetic thin films is important to realize its practical applications as spintronic devices. In this work, we report the electric field controlled ferromagnetic (FM) to paramagnetic (PM) transition in a SrRuO3/Pb(Mg1/3Nb2/3)O3-PbTiO3 (SRO/PMN-PT) heterostructures by adding a bias voltage. The FM to PM transition and the...
We report the growth of high quality SnS van der Waals epitaxies (vdWEs) on mica by molecular beam epitaxy (MBE). Record low rocking curve FWHM for the SnS (001) and SnSe (001) eplayers were observed. Detailed investigations of the film morphology indicate layer-by-Iayer growth mode expected for 2D layered structure. The characteristic structural symmetry of the mica surface leads to the nucleation...
SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL). Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 eV with high absorption coefficient, α, of >104 cm−1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility...
SnS van der Waals epitaxies (vdWEs) were grown by molecular beam epitaxy (MBE) on graphene buffer layer. Photo-absorption measurements indicate an indirect bandgap of ∼1 eV and a direct bandgap of ∼1.25 e V. Using this novel growth technique we observed significant lowering in the crystal size and the rocking curve FWHM compared to films deposited without the buffer layer. The absorption coefficient,...
Bandgap properties of hybrid structures combining defects and multiple heterostructures containing negative-index materials are investigated by optical transfer matrix method. This photonic heterostructure consists of different one-dimensional photonic crystals. The results obtained show that the zero-averaged refractive-index gaps can be substantially extended when the constituent ID photonic crystals...
Heart Rate Variability (HRV) analysis can be heavily affected by slow trends and outliers in inter-beat interval data, especially when recorded during exercise. In this paper, a trend and outlier removal method is presented. Inter-beat interval data are considered as time series and decomposed into trend, outlier and fluctuation components using an iterated algorithm. Trend components reflect heart...
Our calculations suggest that experiments relating to disk heating, as well as beam deposition, focusing and transport can be performed within the context of current design proposals for accelerator test-facilities. Since the test-facilities have lower ion kinetic energy and beam pulse power as compared to reactor drivers, we achieve high-beam intensities at the focal spot by using short focal distance...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.