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Based on the thin film transistor (TFT)-controlled field emitter array (FEA) technology, the authors successfully fabricated an FEA with a memory function for an ultra-high brightness field emitter display (FED). If an additional TFT for discharge is inserted parallel with the capacitor, the light emitting period can be completely controlled. The brightness of FED can be dynamically controlled by...
We have fabricated 400-nm-band GaN-based blue-violet laser diodes (BV-LDs) with high reliability on GaN substrates. Under 45 mW continuous wave (CW) operation at 60/spl deg/C, these LDs have been operating stably for more than 1400 h. We have adopted the narrow ridge width of 1.4 /spl mu/m and both sides of ridge stripe are covered with a stacked layer of Si on SiO/sub 2/. As a result, we have succeed...
The adsorption structure of the C 5 H 5 N molecule on the Si(111)-(7×7) surface has been studied by low-temperature scanning tunneling microscopy (STM). Two adsorption states are observed: one appears chemisorbed and the other is physisorbed. The C 5 H 5 N molecule adsorbs above a dimer row on the surface between the two halves of the unit cell.
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