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The chemical interaction of Al and Mn deposited on Ru thin films for use as copper diffusion barrier layers are assessed in-situ using x-ray photoelectron spectroscopy (XPS). Thin (∼1–2 nm) Al and Mn films were separately deposited on 3 nm Ru liner layers on SiO2, and both Al/Ru/SiO2 and Mn/Ru/SiO2 structures were subsequently thermally annealed. Results indicate the diffusion of both metals through...
In this x-ray photoelectron spectroscopy (XPS) study ultra-thin Si and MnO films were deposited on a range of low dielectric constant carbon doped oxides (CDO) with varying carbon content, in order to accurately determine the binding energy (BE) positions of the Si 2p and O 1s core level peaks as a function of carbon concentration. The results show a measurable correlation between carbon content and...
Synchrotron radiation photoelectron spectroscopy (SRPES) is used to investigate the in-situ formation of ultra thin Mn silicate copper diffusion barrier layers on SiO2. It was shown that high temperature annealing results in the growth of Mn silicate, the stoichiometry of which was calculated to be MnSiO3. SRPES results also show that the interaction of metallic Mn with SiO2 is self limiting at high...
The electrical behavior of broken down thin films of magnesium oxide (MgO) grown on indium phosphide (InP) substrates was investigated. To our knowledge, this is the first report that identifies the Soft Break Down (SBD) conduction mode in a metal gate/high-kappa/III-V semiconductor structure. It is shown that the leakage current associated with this failure mode follows the power-law model I=aVb...
In this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20 nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-kappa gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider...
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