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We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with...
This paper focuses on the study of the drop-impact reliability of solder joints of integrated circuit components on printed circuit boards. The impact strength and impact toughness of solder alloys are investigated by performing the ball impact test (an experimental approach). For comparison with experimental results, the fracture of a single solder joint specimen is numerically simulated using the...
We fabricated high-index-contrast II-VI-based multiple-quantum-well channel-waveguides buried in a SiO2 cladding-layer, for the application to intersubband transition all-optical-switches at communication wavelengths. We demonstrated the sub-picosecond switching of the waveguides using intersubband absorption saturation recovery.
A V-grooved substrate buried-heterostructure laser emitting at 1.3 ?m wavelength is described. The active layer is buried in the V-shaped groove. A CW threshold current of 10~20 mA is obtained and a far-field pattern free from irregularity and peak shift is realised. Damped relaxation oscillation and stable aging characteristics are obtained.
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