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To verify the interface state properties of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs) with and gate dielectrics, the low-frequency noise (LFN) of various gate-length devices from 5 to 50 was measured and evaluated. Before LFN measurements, the dc characteristics, such as the subthreshold slope , were measured for comparison...
Electrostatic channel extension (ESCE) MOSFET, a transistor with static inversion layer formed by interface fixed charge is fabricated in planar bulk structure down to 20 nm gate-length. The 24 nm gate-length ESCE transistor with current 80 nm gate-length SRAM technology shows the excellent drive currents of 1.0 mA/mum with IOFF of 93 nA/mum at VDS = 1 V. Moreover, the ESCE transistor with the gate...
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