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GaSb has been studied as a new alternative substrate for growing HgCdTe via molecular beam epitaxy (MBE). Cross-sectional transmission electron microscopy (TEM) studies indicate that MBE-grown CdTe buffer layers on GaSb have much lower misfit dislocation density than comparable layers grown on GaAs. The MBE-grown mid-wave infrared (MWIR) HgCdTe layers on GaSb substrates present material quality comparable...
In this paper, we present a study on ANSYS strain analysis and MBE growth of CdTe epilayers on GaSb substrates. The ANSYS simulation result shows that GaSb performs much better than other alternative substrates, e.g. GaAs. To verify the simulation results, CdTe buffer layers were grown by MBE on GaSb, which show material quality comparable to or slightly better than that on GaAs substrate. Furthermore,...
Iodine (I) doping in mercury cadmium telluride (Hg1−xCdxTe) grown by molecular beam epitaxy (MBE) on CdZnTe substrates with cadmium-iodide (CdI2) as the dopant source was investigated. I doping concentration in the samples was controlled by CdI2 source temperature that varied in 110°C–150°C range. Depending upon I doping concentration, the electrical conductivity at 77K for as grown films varied in...
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