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In this talk we will discuss fabrication and device aspects of IBMs work on III–V Tunnel FETs. Since our focus is on the monolithic integration of III–V on Si, we will show our recently developed Template Assisted Selective Epitaxy (TASE) technology and its application to both TFETs as well as other electronic devices. In TASE, III–V materials can be grown within templates, which allows for versatility...
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