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This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
We report the first GaN-based pulse width modulation (PWM) circuit for integrated GaN gate driver. This circuit is composed of a sawtooth generator and a comparator, both of which exhibit stable operation at temperatures up to 250 °C and operate properly at 1 MHz. The PWM circuit is able to generate PWM signals whose duty cycle is effectively modulated over a wide range by a reference voltage. This...
In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures...
The ON-state reliability of enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma implantation technology under gate overdrive is reported. A critical gate forward voltage (VGC) is observed, beyond which the turn-on voltage of the 2DEG channel exhibits a negative shift. This phenomenon is proposed to be caused by the impact ionization of the F ions in the barrier layer by hot electron injection...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
A high-performance bootstrapped comparator operating with a single-polarity power supply is demonstrated for the development of GaN smart power ICs. The comparator features monolithically integrated enhancement-mode (E-mode) and depletion mode (D-mode) AlGaN/GaN HEMTs. The tail current source uses E-mode HEMT, enabling single-polarity power supply. The input stage could be either E-mode or D-mode...
Owing to superior physical properties such as high electron saturation velocity and high electric breakdown field, GaN-based high electron mobility transistors (HEMTs) are capable of delivering superior performance in microwave amplifiers, high power switches, and high temperature integrated circuits (ICs). Compared to the conventional D-mode HEMTs with negative threshold voltages, enhancement-mode...
Due to the thermal mismatch between GaN and Si, GaN grown on Si at elevated temperatures (~1100 °C) usually exhibits large internal residual stress. Therefore, the characterization of residual stress in GaN on Si substrate is of particular importance. In this work, a type of reliable bent-beam strain sensor was used to estimate residual stress in suspended GaN microstructures. The device was modeled...
Ridge waveguide type-I quantum-well GaSb-based diode lasers, with active regions utilizing InGaAsSb/AlInGaAsSb quantum wells, have been demonstrated to operate at temperatures as high as 40°C with 1 mW of power at wavelengths above 3.2 μm.
Self-protected GaN power devices were realized using AlGaN/GaN-on-Si platform, where two built-in intelligent functions were demonstrated for “Smart Discrete” applications. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the...
Successful application of recently developed GaSb-based single-mode vertical-cavity surface-emitting lasers for gas-sensing at 2.3 mum is reported. CO and CH4 have been detected simultaneously using wavelength modulation spectroscopy with a multi-line curve fit concept.
We present the performance parameters of GaSb-based diode lasers operating in spectral region from 2 to 3.36 mum. CW output power levels of 120 mW at 3 mum, 60 mW at 3.1 mum, and 15 mW at 3.36 mum (285 K) are reported.
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