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This work studies the potentials and challenges of designing ultra-low-power analog circuits exploiting unique characteristics of Tunnel-FET (TFET). TFET can achieve ultra-low quiescent current (∼pA). In the subthreshold operation, TFET exhibit subthreshold swing lower than 60mV/decade, and hence higher transconductance per bias current than the MOSFET. TFET also exhibit very weak temperature dependence,...
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