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Two compact frequency generation topologies based on distributed oscillator architecture have been for the very first time integrated at 134GHz and 202GHz in a 10ML 28nm FDSOI CMOS technology. The efficient fundamental frequency generation enables output powers of 0.4dBm and 0.3dBm and 5.5% and 5.4% DC-to-RF efficiency respectively. The body tie of the 28nm FDSOI technology allows phase noise fine...
Terahertz imaging has been gaining increasing attention for its emerging applications in security, biomedical and material characterization. Previous works have demonstrated terahertz imagers on silicon: in [1], the authors demonstrated a 280GHz 4×4 array and an 860GHz pixel using Schottky-barrier diodes; in [2], a 0.7-to-1.1THz 1k-pixel camera was presented. Unfortunately, most previous works are...
A high-power 320 GHz transmitter using 130 nm SiGe BiCMOS technology ( 220/280 GHz) is reported. This transmitter consists of a 4 × 4 array of radiators based on coupled harmonic oscillators. By incorporating a signal filter structure called return-path gap coupler into a differential self-feeding oscillator, the proposed 320 GHz radiator simultaneously maximizes the fundamental oscillation...
Non-ionizing terahertz imaging using solid-state integrated electronics has been gaining increasing attention over the past few years. However, there are currently several factors that deter the implementations of fully-integrated imaging systems. Due to the lack of low-noise amplification above fmax, the sensitivity of THz pixels on silicon cannot match that of its mm-Wave or light-wave counterparts...
Deep sub-micron CMOS technologies have enabled the development of highly digital radios for wireless communications at low Gigahertz frequencies [1], [2]. Meanwhile, nanometer scale CMOS allows to push the RF frequencies to the millimeter wave frequency range. Particularly 60GHz radio has emerged as the candidate for high-data-rate (10 Gb/sec), short-distance (1 to 10m) wireless communication systems...
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