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This paper presents the new detailed analysis of the secondary ion effect analytical version that allows fast and accurate calculation of neutron, proton and heavy ion cross sections in SRAM based memories. The advantage of this new version is a better determination of the input parameters using heavy ion data. A validation is presented by comparing simulation results with experimental data for technology...
This paper presents the new DASIE analytical version that allows fast and accurate calculation of neutron, proton and heavy ion cross sections in SRAM based memories. The advantage of this new version is a better determination of the input parameters using heavy ion data. A validation is presented by comparing simulation results with experimental data for technology from 600 to 180-nm.
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