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This paper presents a methodology for analyzing the behavior of nanometer technologies regarding "multiple event transients" (MET) caused by nuclear reaction induced by atmospheric neutrons. For the first time, currents collected by several sensitive areas of an ASIC cell resulting from a nuclear reaction are addressed by simulation. Libraries of several thousand types of currents are obtained...
This paper presents a new Monte-Carlo methodology to investigate the transient effect occurrence in complementary metal oxide semiconductor (CMOS) logic circuits: TMC DASIE (transient Monte-Carlo detailed analysis of secondary ion effects). The production and effects of single-event transients inside CMOS combinational logic gates are examined. First results and perspectives are presented
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