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The paper deals with modelling non-isothermal characteristics of SiC power Schottky diodes. In the paper the D.C. electrothermal model of the investigated devices included the self-heating phenomenon was presented and experimentally verified. The model was formulated for SPICE. The evaluation of the accuracy of the elaborated model has been performed by comparison of calculated and measured D.C. characteristics...
This paper concerns the problem of SPICE modeling of the class of silicon-carbide MPS diodes with thermal effects (self-heating) taken into account. In the paper the SPICE electrothermal model by Infineon Technologies of SiC MPS diodes is considered and described in detail. The model is verified experimentally by comparing the calculated and measured device characteristics. The simple modification...
In the paper the problem of modelling DC characteristics of SiC power Schottky diodes with thermal effects taken into account is considered. The electrothermal model of the investigated devices was formulated for SPICE and experimentally verified. The evaluation of accuracy of the elaborated model has been performed by comparison of measured and calculated characteristics of a selected SiC power Schottky...
This paper is concerned with modelling of silicon and silicon carbide power Schottky diodes. The SPICE built-in isothermal model of silicon diodes and the electrothermal macromode) of silicon carbide Schottky diodes proposed by Infineon Technologies are investigated and modified. The quality of Schottky diodes modelling is estimated by measurements.
This paper concerns the problem of SPICE modelling of the class of silicon-carbide (SiC) Schottky diodes with thermal effects (selfheating) taken into account. Since April 2001 the SiC Schottky diodes made by Infineon Technologies have been commercially attainable. In the paper the SPICE electrothermal (including selfheating) macromodel of Infineon Technologies SiC Schottky diode is presented and...
The performance of layered Pr2Ti2O7 /SiO2 MIM capacitors for mixed-signal and RF device applications is presented for the first time. A capacitance density of 3.2 fF/mum2 with a very low leakage parameter of 5 fA/pFV and quadratic voltage capacitance coefficient of -100 ppm/V2 was achieved. The extrapolated operating voltage for 10 years lifetime is 3 V
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