The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The response of Pt-circular Schottky diodes fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure to hydrogen gas at various temperatures, ranging from 25°C to 200°C has been investigated. A 5 nm-thick of catalytic Pt Shottky contact is formed by electron beam evaporation. Both forward and reverse currents of the device increase upon exposing to hydrogen gas. Although...
A gateless field-effect-transistor (FET) device fabricated on undoped AlGaN/GaN high-electron-mobility-transistor (HEMT) structure is investigated as a liquid-phase sensor. Good gate controllability for typical current-voltage (I-V) characteristics of FET is observed. This result shows that an undoped-AlGaN surface at the open-gate area is effectively controlled by the isolated gate voltage via chemical...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.