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In this paper, an efficient non-iterative approach for calculating the threshold voltage of the nanoscale double gate nMOSFET is presented. First, it is shown that the parabolic potential is a reasonable approximation for the body potential along the coordinate normal to the interfaces at the threshold of conduction. Then, the energies of confined carriers are determined by solving the Schrodinger's...
In this paper, an analytical model for negative bias temperature instability (NBTI) induced degradation in a triple gate MOSFET is presented. The model is obtained by solving the reaction-diffusion equations multi-dimensionally. The formulation considers the molecular diffusion of hydrogen in the oxide. The geometry dependence of the time exponent of NBTI degradation in triple gate MOSFETs are modeled...
In this work, the effect of negative bias temperature instability (NBTI) on the potential distribution and degradation of floating-body (FB) undoped double-gate (DG) MOSFETs is modeled. The approach is based on solving the one-dimensional (1-D) Poisson's equation considering the NBTI effect in the inversion region. The study includes different stress voltages and device body thicknesses. The accuracy...
In this paper, we present a fast yet accurate semi-analytical model for the I-V and C-V characteristics of nanoscale undoped symmetric double gate (DG) MOSFETs. The model employs a simple parabolic potential approximation for the body potential in the coordinate normal to the interfaces in the all regions of operation. To include quantum effects in the model, the Schrodinger's equation is analytically...
In this paper, a model for SOI MOSFETs which considers the self-heating effect is proposed. The model which is based on a multi layer perceptron (MLP) neural network, generates the drain current as a function of the gate-source voltage, drain-source voltage, and the device temperature. Based on the current, the temperature of the device channel is calculated. The neural network adapts itself with...
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