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The potential of the Non-equilibrium Green function formalism as a new TCAD tool is demonstrated with concrete examples. We revise ballistic simulations of variability associated with discrete dopants and SiO2/Si interface roughness of silicon gate-all-around nanowire transistors. Phonon limited mobility in various nanowire cross-sections are calculated from the current-voltage characteristics, showing...
In this paper, we review and extend recent work on the effect of random discrete dopants on the statistical variability in gate-all-around silicon nanowire transistors. The electron transport is described using the nonequilibrium Green's function formalism. Full 3-D real-space and coupled-mode-space representations are used. Two different cross sections (i.e., and ...
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