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With the development of the GaN-based light-emitting diodes (LEDs), the need for p-GaN contacts with low resistivity, good thermal stability, and high reflectivity has become more urgent. In this paper, a novel method of surface treatment on p-GaN to form good ohmic contacts between p-GaN and Ag was proposed. We proposed a novel structure with Ag/ultrathin-ITO/p-GaN contact which shows a low contact...
GaN-based vertical-geometry light-emitting diodes (V-LEDs) are considered as ideal candidates for future high-power and high-efficiency lighting devices. However, the optoelectrical performance, yield, and stability of V-LEDs are still inferior than the conventional lateral LEDs (L-LEDs) due to some fabrication process hurdles, such as the p-type reflective electrode, nitrogen-polar (N-polar) n-type...
Low resistance and thermally stable n-type contact to N-polar GaN is essentially important for vertical light emitting diodes (VLEDs) . In this paper, the difference of the contacts deposited on wet-etching roughed and un-roughed surface was investigated. It was found that VLEDs with contacts deposited on roughed surface exhibits lower leakage currents yet higher operating voltage. Based on this,...
This experiment used A/O industrial filter cloth self-forming dynamic membrane reactor to treat campus domestic sewage, COD removal rate of the effluent was 91%, NH3-N and TN removal rate of the effluent was 92.4% and 88.1% respectively, the average turbidity of the effluent was 2.31NTU. The test results showed that the A/O industrial filter cloth self-forming dynamic membrane reactor had good effect...
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