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We applied advanced heat dissipating technology to reduce heat resistances of the key devices to increase the output power density of the inverter. The IGBT modules were direct water-cooled, and the integrated DC-link capacitor was indirect water-cooled. We conducted the simulation and the test, which proved that reducing the heat resistances was effective to improve the output density of the inverter...
In this paper, we discuss how to implement the self heating and aging models with TMI. Various examples about self heating and aging simulations with TMI methodology are shown in this paper. Without trading-off the accuracy, the one with proposed TMI approach for self heating simulations takes much shorter simulation time.
Conventional 2 in 1 IGBT package with 62mm×150 mm suffers from imbalance of current distribution and switching loss due to the different effect of internal electromagnetic field on multiple IGBT chips connected in parallel. A novel DBC (Direct Bonding Copper) layout was proposed in this paper to reduce the parasitics and the electromagnetic coupling between control loop and main current path. And...
Resistive RAM (RRAM) faces two major design challenges: 1) cell area versus write current requirements; 2) cell current (ICELL) versus read disturbance. An RRAM using logic-process-based vertical parasitic-BJT (VPBJT) switches and correspondent cell array (VPBJT-CA) can achieve 4.5+x smaller macro area. To overcome temperature-dependent fluctuation in the base-emitter voltage difference (VBE) of BJT,...
In this study, the ruthenium dioxide (RuO2) thin film was deposited on silicon (Si) substrate by radio frequency (R. F.) sputtering system. In order to optimize the sensing property of the chloride ion sensing device, the chloride ion selective membrane was prepared on sensing window of Si/RuO2 sensing device by dropping and spin coating methods, respectively. Furthermore, the chloride ion selective...
In this paper, statistical measurements on the retention behavior of the stable HfOx-based RRAM under various thermal/voltage/cycling stresses are investigated. Testing results show that, data retention of high resistance state (HRS) of a RRAM is insensitive to temperature and cycling-aging. An empirical equation involving the voltage/thermal/cycling-stress acceleration is given for lifetime prediction...
In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge21Sn10Sb15Te54 (GSST) and Ge2Sb2Te5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed.
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