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The internal gettering (IG) of Cu contamination in Czochralski (Cz) silicon wafers has been investigated using both a conventional IG process based on high-low-high (H-L-H) annealing and a rapid-thermal-process (RTP) based magic denuded zone (MDZ) process. It is found that a denuded zone (DZ) and bulk micro-defects (BMDs) acting as the gettering sites were formed in both cases. However, after cross-sectional...
With the rapid reduction in feature size of ultra large scaled integrate (ULSI) circuits, the microdefects in Czochralski silicon (Cz-Si) such as oxygen precipitates play increasingly important roles in the reliability of devices. In recent years, the novel properties of impurity (nitrogen, germanium and carbon) doped Cz-Si materials have attracted increasingly considerable attentions. In this presentation,...
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