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We proposed a new statistical evaluation method to justify the microstructure evolution process of conductive filament (CF) in the reset operation of resistive switching memory (RRAM) according to the dependence of the Weibull slope of reset parameters on the CF size. We demonstrated that in Cu/HfO2/Pt device the CF can be controlled to be ruptured abruptly, which is more advantageous to the reliable...
Multi-level per cell (MLC) is a prime approach to realize high-density storage for resistive random access memory (RRAM). In this work, we investigated the data retention and random telegraph noise (RTN) characteristics on intermediate resistance states (IRS) which were programmed in Set and Reset process for the first time. The main observations are as follows: 1. Although the IRS-SET have higher...
The variation of switching parameters in RRAM is impacted by the resistance states through a statistical analysis. We proposed some improved program/erase (P/E) methods to precisely control the fluctuation of the resistance states. In DC P/E operation, combing current-sweep-induced gradual SET and voltage-sweep-induced gradual RESET, uniform resistance states can be achieved. In pulse P/E operation,...
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