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We report the demonstration of a strained ultra-thin-body (UTB) p-channel field-effect transistor (pFET) with a silicon body thickness of 8 nm and silicon-germanium (SiGe) source and drain (S/D) stressors with 46% germanium (Ge). The Ge incorporation into the S/D regions is the highest reported to date, and is realized using a novel Ge condensation process in the S/D regions, performed for the first...
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