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This paper reports the design and fabrication of dynamic ultra-miniature pressure sensor. Based on bulk silicon MEMS micromachining technology, the Si-Si direct vacuum bonding and thinning technology with precision control were used to fabricate the subminiature silicon piezoresistive chip for absolute pressure measurement. The sensors with outer diameter Φ2.0mm were packaged with miniature probe...
A theoretical analysis on a rectangular energy-trapped piezoelectric thin zinc oxide film resonator operating with thickness-extensional modes is performed in this paper. The two-dimensional scalar differential equations derived by Tiersten and Stevens are used which can describe the in-plane mode distribution. Based on the scalar equations, we construct a variational formulation which provides a...
We demonstrate the use of Gas Cluster Ion Beam (GCIB) nanoprocessing technology for producing ultrathin silver waveguide and disk structures with smoother surfaces and wider grain sizes for enhanced surface plasmon propagation.
In this paper a Pt Archimedean-spiral interdigitated microelectrode with containing trenches was put forward, fabricated and characterized. Pt film with thickness 300nm was deposited by radio frequency (RF) magnetron sputtering on a Ti deposited n(100) Si substrate. On this Pt coated Si substrate a passivation layer of Si3N4 film with thickness 350nm was coated by plasma-enhanced chemi-cal deposition...
In this paper Au ring microelectrodes are fabricated and characterized. With an optical fibre core as a substrate Au film with thickness 300nm was coated by an electron beam evaporation system, then on this Au coated substrate a parylene passivation layer was deposited, forming the desired Au ring microelectrode. Scanning electron microscopy (SEM) was used to characterize the quality of the deposited...
We investigated the 1.53µm electroluminescence of erbium excited by hot carriers in ErRE (RE=Yb, Y) silicate metal-insulator-silicon light emitting devices. Intense 1.53µm light emissions and large Er3+ impact excitation cross sections were obtained.
The photoluminescence (PL) and decay time at 1.53μm of sputtered Er0.2Re1.8Si2O7 (Re=Yb, Y) thin films were investigated. The enhancement of the PL at 974nm pumping in the Er0.2Re1.8Si2O7 film was demonstrated compared with Er0.2Re1.8Si2O7 film.
The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RF-magnetron co-sputtering of Er2O3, Yb2O3 and SiO2 on c-Si and subsequent annealing in N2 or O2 atmosphere.
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