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Bandgap-tunable SiON (oxynitride) tunnel barrier is developed to optimize the performance and reliability of BE-SONOS NAND Flash devices. The HTO O2 layer of the ONO tunnel barrier is replaced by SiON thin films with various refractive index (n) and thickness. We found that with n ≤ 1.72, SiON can provide excellent data retention comparable to conventional BE-SONOS. On the other hand, the erase speed...
Sub-40nm body-tied FinFET BE-SONOS NAND Flash is studied extensively. BE-SONOS offers efficient hole tunneling erase and excellent data retention. When integrated into a FinFET structure, the inherent field enhancement (FE) effect around the fin tip provides very faster program/erase speed. However, the non-uniform injection around the fin also greatly complicates the operation of FinFET BE-SONOS...
In this paper, the reliability properties of bandgap-engineered SONOS (BE-SONOS) devices with various processing methods are extensively studied. BE-SONOS employs a multilayer O1/N1/O2/N2/O3 stack, where O1/N1/O2 serves as a bandgap-engineered tunneling barrier that provides an efficient hole-tunneling erase but eliminates the direct-tunneling leakage. BE-SONOS can overcome the fundamental limitation...
A bandgap engineered SONOS with greatly improved reliability properties is proposed. This concept is demonstrated by a multilayer structure of O1/N1/O2/N2/O3, where the ultra-thin "O1/N1/O2" serves as a non-trapping tunneling dielectric, N2 the high-trapping-rate charge storage layer, and O3 the blocking oxide. The ultra-thin "O1/N1/O2" provides a "modulated tunneling barrier"...
A novel p-channel NAND-type non-volatile flash memory using nitride-trapping device is presented. The p-channel device is programmed by very efficient band-to-band tunneling hot electron (BBHE), and erased by self-converging channel hole tunneling. An ultra-thin bandgap engineered ONO tunneling dielectric as presented in H. T. Lue et al. (2005) is adopted to achieve efficient hole-tunneling erase...
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