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We demonstrate a novel ??remote interfacial layer (IL) scavenging?? technique yielding a record-setting equivalent oxide thickness (EOT) of 0.42 nm using a HfO2-based MOSFET high-?? gate dielectric. Intrinsic effects of IL scaling on carrier mobility are clarified using this method. We reveal that the mobility degradation observed for La-containing high-?? is not due to the La dipole but due to the...
We report for the first time that extreme EOT scaling and low n/p VTHs can be achieved simultaneously. Underlying mechanisms that enable EOT scaling and EWF tuning are explained and the fundamental device parameters including reliability of the extremely scaled devices are discussed. Record low gate leakage, appropriately low VTHs and competitive carrier mobilities in this work demonstrate the gate...
If Si (110) channel can be used for both nMOS and pMOS FinFET, the implementation of FinFET can be simplified significantly. Electron mobility degradation at Si(110) channel of finFET has been one of the major barriers in this path. We report a creative method to improve electron and hole mobilities using a novel metal electrode induced-strain engineering, which also features the effective workfunction...
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