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In this paper, for the first time we demonstrate that horizontally stacked gate-all-around (GAA) Nanosheet structure is a good candidate for the replacement of FinFET at the 5nm technology node and beyond. It offers increased Weff per active footprint and better performance compared to FinFET, and with a less complex patterning strategy, leveraging EUV lithography. Good electrostatics are reported...
We describe the use of high resolution X-ray diffraction (HRXRD) for inline metrology of strain relaxed buffer (SRB) layers and epitaxial layers grown thereon. The use of SRBs as a virtual substrate is a promising candidate for advanced CMOS logic at the 7 nm technology node and presents some unique challenges to traditional HRXRD measurements. To overcome these challenges, reciprocal space maps (RSMs)...
A variable magnification electron holography, applicable for two-dimensional (2-D) potential mapping of semiconductor devices, employing a dual-lens imaging system is described. Imaging operation consists of a virtual image formed by the objective lens (OL) and a real image formed in a fixed imaging plane by the objective minilens. Wide variations in field of view (100–900nm) and fringe spacing (0...
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