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Improvement of the AlGaN/GaN high-electron mobility transistor's (HEMT's) off -state breakdown voltage is achieved by implanting 19F+ ions at an energy of 50 keV and dose of 1 × 1012 cm-2 under the gate region using BF3 as the source. The charge state of the implanted fluorine ions changes from positive to negative in the AlGaN/GaN structure because of fluorine's strong electronegativity. The negative-charged...
GaN “Smart Discrete” power devices were realized using the AlGaN/GaN-on-Si platform, where two built-in intelligent self-protection functions were demonstrated. First, an AlGaN/GaN normally-off high electron mobility transistor (HEMT) with reverse drain blocking capability was realized, featuring a Schottky contact controlled drain barrier. Compared to the Schottky drain structures, the new design...
Owing to superior physical properties such as high electron saturation velocity and high electric breakdown field, GaN-based high electron mobility transistors (HEMTs) are capable of delivering superior performance in microwave amplifiers, high power switches, and high temperature integrated circuits (ICs). Compared to the conventional D-mode HEMTs with negative threshold voltages, enhancement-mode...
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