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We have fabricated and characterized 2-D gas-based, including 2-D electron gas (2DEG) and 2-D hole gas (2DHG), heterostructure metal-semiconductor-metal (MSM) photodetectors on GaAs. Both the high-speed measurement of time response and the simulation results show that a vertical field developed in the active absorption region due to the delta-doping layer facilitates one type of photogenerated carrier...
We have previously demonstrated the improved time response performance of the heterostructure metal-semiconductor-metal (HMSM) photodetector, due to the presence of a two-dimensional electron gas (2DEG). However, the time response presents a long tail due to the slow moving holes, which would still be an impediment for high frequency operation. In order to overcome this limitation, we have developed...
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