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In this work, the Hot-Carrier-Induced (HCI) degradation mechanism of the 30 V shallow trench isolation (STI) n-type lateral DMOS (nLDMOS) with two-step-oxide process applied in high side application (called as HS-nLDMOS) is investigated. It implies that the Ron, sp (on-resistance measured under high side condition) suffers from more damage impact than Ron, ls (on-resistance measured under low side...
The hot-carrier-induced degradation for the n-type lateral DMOS (nLDMOS) with floating p-top layer has been experimentally investigated for the first time. Our experiments show that the degradation of the linear drain current (Idlin) has a strange shift at the beginning of the stress. The studies demonstrate that the strange shift comes from the unexpected depletion of the p-top layer. Moreover, it...
The schematic cross-sectional structure of the device used in our experiment is shown in Fig.1. Fig.2 indicates the difference of the hot-carrier degradation results when the devices are stressed under the dynamic stress with different duty cycles. We have experimented that the degradation under the off-state condition can be neglected. Therefore, the difference of the degradation under the different...
The degradations of p-type lateral extended drain MOS transistors with thick gate oxide are experimentally investigated. A novel structure is proposed with a low doped boundary of the drift region without additional process, which will be helpful in reducing the electric field, reducing the degradations of electrical parameters correspondingly. The effects have been detailed analyzed by the CP measurements...
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