The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, a comprehensive friction model for collaborative industrial robot joints is proposed which takes into account the velocity, temperature and load torque effects. The model indicates that the velocity and temperature have a strong influence on viscous friction nonlinearly, whereas load torque significantly influences the Coulomb friction linearly and causes a slight Stribeck effect. The...
Insulated gate bipolar transistor (IGBT) modules are essential in power electronic application. Due to the improvement in chips and packaging, the maximum operation junction temperature Tvj,op of the latest IGBT module has been increased up to 175°C, comparing to 150°C of the previous generation. With the enhancement of power density, its application at high temperature gives rise to more concerns...
Unit warpage in Ball Grid Array (BGA) packages with different substrates due to coefficient of thermal expansion (CTE) and Young's Modulus mismatch was investigated. The effect of substrate materials on BGA packages warpage was analyzed. Thermal Mechanical Analyzer (TMA) and Dynamic Mechanical Analyzer (DMA) were used to measure Glass Transition Temperature (Tg) and CTE and Young's Modulus of the...
With the strength of fine pitch, high electrical conductivity and excellent reliability, copper pillar interconnect becomes a promising alternative to traditional solder bump. However, bad surface smoothness is a severe problem and significantly affects the reliability of the bump connection. In this paper, numerical simulations on the shape evolution of copper pillar bump and the effect of bump dimension...
As the electronic packaging density continues to increase, flip chip or stacked packaging via bump bonding is gradually replacing traditional wire bonding and will become the mainstream packaging form in the future. For copper bumps, this new type of electronic interconnection has not yet been fixed by industry standards. Therefore, this paper has made a preliminary study on the reliability of this...
InAs/GaSb type-II superlattices materials have large quantum efficiency and responsivity, and smaller tunneling current and Auger recombination rate. However, the lattice constants of two components of the SLs are not exactly the same, which would introduce strain between each layer. InSb is introduced into InAs component, forming InAs1−xSbx/GaSb to free the strain. Band structure of SLs is computed...
Package warpage is often a problem in surface mount reflow process especially for thin package. Large warpage prevents package solder balls to be connected to PCB pads and results in low process yield. In order to effectively minimize warpage in reflow process, this paper proposed a new approach to reduce package warpage by temporally bonding the back of the packaged component to a rigid plate. In...
With the requirements of higher board level reliability, researchers gradually turned attention to complex composition solders like Sn-Ag-Cu-Ni-Bi solders. This quinary system solder has lower melting point and higher tensile strength than traditional Sn-Ag-Cu solder, which may good for the reliability. In this research, the effects of tensile strength on thermal fatigue properties of Sn-2Ag-0.5Cu-0...
Copper pillar bump interconnect technology, with its good electrical properties and electromigration resistance, is becoming the next key technology for fine pitch interconnection of chips. The study of the effect of copper pillar bump size on the interfacial diffusion reaction has directive significance to the application of copper pillar bump. This paper focuses on the effect of size on the reliability...
Interface (IF) layers have great influence on the performance of InAs/GaSb type-II superlattice, which can not only balance the strain between adjacent layers, but also change the absorption cutoff wavelength and relative absorption strength. In this study, a modified k·p method based on envelope function approximation is used to theoretically investigate different IF influence on Auger recombination,...
The competitive adsorption between suppressor and accelerator is the crucial behavior to achieve void-free filling of TSV during electrodeposition. Convective velocity and potential on the reactive electrode surface are two important factors for adsorption of additives. In this paper, a method of calculating the competitively adsorptive parameter Kads is found to quantize the effect of these factors...
Via filling by copper electrodeposition is of great interest for industry to realize 3D packaging and reduce cost. To achieve “bottom-up” filling with no voids and seams, numerous studies on additives mechanism have been conducted. The organic sulful-containing accelerator, bis(3-sulfopropyl) disulfide (SPS) and the inhibitor (e.g., poly(ethylene glycol) (PEG) ), are common additives in “bottom-up”...
TSV (through silicon via) filling is one of the key challenges for 3D integration. Non-uniform distribution of current density inside the high aspect ratio via often leads to pinch-off effect which seriously harms interconnect functionality and reliability. An additives system, consisting of an accelerator (SPS), a suppressor (PEG), a leveler (JGB) and chloride ions, is common choice for bottom-up...
The Excellent printability of graphene sheets on large scale, flexible substrates makes graphene a perfect substitute of traditional conductive material in electronics industry. In this letter we demonstrate several properties of conductive film prepared by spin-coating graphene on PET substrates. After spin coating and air dry, the graphene film had a sheet resistance of 47.4Ω/□, resistivity of 1...
A simple, physics-based model is developed for study of ultra-low specific contact resistivity metal-interfacial layer-semiconductor (M-I-S) contacts. Reduction in metal induced gap states (MIGS) density and Fermi level de-pinning in metal-semiconductor interface reduce the Schottky barrier height (SBH). Be coupled with electron transport model, the specific contact resistivity in different M-I-S...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
This paper focuses on the performance of IPM (Intelligent Power Module) under power cycling test which is simulated by a FEA (Finite Element Analysis) method. Through the method of control variables some key parameters about the module's thermal and structure properties can be obtained. The key parameters in the calculation include power dissipation of silicon chip, cycle period, different materials...
As the major unit of the electrical energy transformations device, IGBT (Insulated Gate Bipolar Transistor) determines the lifetime of the power device immediately. IGBT module is normally made up of chip, DBC (Direct Bonded Copper), substrate and bonding wire, Due to the different CTE(Coefficient of Thermal Expansion), thermal stress occurs when IGBT module works. which leads to device failure. In...
Electromagnetic noise caused by high speed digital and radio frequency electronic devices can affect the normal operation of other devices within the same system and result in significant intra-system electromagnetic interference (EMI) problems. Conformal shielding is an emerging method to prevent EMI by using metallization techniques to coat a thin metal layer around the package. In this study, copper...
The superfilling of through silicon vias (TSVs) is a technical challenge for the fabrication of modern 3D Electronic packaging. In order to achieve void-free-filling for TSVs with different aspect ratios, various organic additives need to be added into the plating bath. Since TSV filling is a complex electrochemical and physical process, it is difficult and very time-consuming to get an optimal additive...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.