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The technical advance of plasma enhanced chemical vapor deposition (PECVD) exhibits the potential to grow large-area high-quality graphene films at relatively low growth temperature, which is beneficial to the fabrication of graphene-based electronic devices/sensors and transparent electrode. However, it remains a challenge to overcome the degradation of graphene quality during growth by PECVD, due...
Graphene has very significant optical and electronic properties, which attract enormous attention. As a unique two-dimensional crystal with one atom thickness, it has high electron and thermal conductivities in addition to flexibility, robustness and impermeability to gases. Its ultra-broad band optical response and excellent non-linear optical properties make it a wonderful material for developing...
A non-contact method is proposed to characterize graphene at microwave frequency by combining Raman spectroscopy and Amphenol Precision Connector (APC-7). The CVD-grown graphene is transferred to the ring-shape Teflon substrate and characterized by Raman spectroscopy to estimate its doping density and the related Fermi energy. The graphene is then sandwiched between two APC-7 coaxial connectors and...
A buried metal-gate field-effect transistor (FET) using a stacked hexagonal boron nitride (h-BN) and chemically vapor deposited (CVD) graphene heterostructure is demonstrated. A thin h-BN multilayer serves as both gate dielectric and supporting layer for the monolayer graphene channel. It is observed that electrical stressing could significantly improve graphene conduction, similar to the effect reported...
We demonstrate a chemical-vapor-deposition (CVD)-based approach for the direct synthesis of graphene on insulator with high-dielectric-constant (high-κ). Rutile titanium dioxide (TiO 2 ), an insulator with reported k value of 80–125, is selected as the growth-initiating layer for graphene. A two-step CVD process is shown to grow graphene directly on TiO 2 crystals or exfoliated ultrathin...
Photoemission spectra of a C 84 film (mixture of two main isomers) have been measured and analyzed in the photon energy range from 13.4 to 129.3eV. The spectral intensities oscillate distinctly in the whole energy region. We quantitatively calculated the intensities of three lowest-binding-energy features (denoted by A–C). The A/B intensity ratios and the oscillatory behavior for individual...
We report the photo-thermal properties of single and double wall carbon nanotubes (CNT) dispersed in various solvents with different concentrations when exposed to near infrared nm laser irradiations. All these studies were correlated to the dispersivity of CNT in various solvents. The observed temperature increase of the various nanotube solutions was found to be determined by the concentration of...
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