The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A buried metal-gate field-effect transistor (FET) using a stacked hexagonal boron nitride (h-BN) and chemically vapor deposited (CVD) graphene heterostructure is demonstrated. A thin h-BN multilayer serves as both gate dielectric and supporting layer for the monolayer graphene channel. It is observed that electrical stressing could significantly improve graphene conduction, similar to the effect reported...
We demonstrate a chemical-vapor-deposition (CVD)-based approach for the direct synthesis of graphene on insulator with high-dielectric-constant (high-κ). Rutile titanium dioxide (TiO 2 ), an insulator with reported k value of 80–125, is selected as the growth-initiating layer for graphene. A two-step CVD process is shown to grow graphene directly on TiO 2 crystals or exfoliated ultrathin...