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In article number 1800072, Josué J. López and co‐workers use photothermal microscopy to measure the near‐field absorption of nanostructured hexagonal boron nitride (h‐BN) and reveal a large photothermal expansion in the nanostructures. This effect is attributed to the anisotropy of the thermal expansion coefficients of h‐BN and the nanostructuring implemented. The photothermal expansion should be...
The controlled nanoscale patterning of 2D materials is a promising approach for engineering the optoelectronic, thermal, and mechanical properties of these materials to achieve novel functionalities and devices. Herein, high‐resolution patterning of hexagonal boron nitride (h‐BN) is demonstrated via both helium and neon ion beams and an optimal dosage range for both ions that serve as a baseline for...
Low energy irradiation of GaSb surfaces has been shown to lead to nanopillar formation. Being performed ex-situ, controlling the parameters of the ion beam for controlled nanopattern formation is challenging. While mainly utilized for imaging and cutting purposes, the development of multibeam (helium/neon) ion microscopes has opened the path towards the use of these microscopes for in-situ ion irradiation...
With the current enzootic circulation of highly pathogenic avian influenza viruses, the ability to increase global pandemic influenza vaccine production capacity is of paramount importance. This has been highlighted by, and is one of the main pillars of, the WHO Global Action Plan for Influenza Vaccines (GAP). Such capacity expansion is especially relevant in developing countries. The Vaccine Formulation...
Many developing countries lack or have inadequate pandemic influenza vaccine manufacturing capacity. In the 2009 H1N1 pandemic, this led to delayed and inadequate vaccine coverage in the developing world. Thus, bolstering developing country influenza vaccine manufacturing capacity is urgently needed. The Cantacuzino Institute in Bucharest, Romania has been producing seasonal influenza vaccine since...
The use of implants of the B18H22 molecule for advanced IC fabrication are discussed. B18H22 can be implanted at energies up to 4 keV B equivalent at beam currents much higher than those achievable with conventional implant species. B18H22 implants have been used for polysilicon and source/drain extension doping and have shown process equivalence to conventional implants. Using B18H22 may require...
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