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The electronic structure of the epitaxial GaN, InN nanolayers, and the ultrathin Cs/GaN and Cs/InN interfaces was investigated under ultrahigh vacuum at various Cs coverages. The experiment was carried out using synchrotron‐based photoelectron spectroscopy. The photoemission spectra of the valence band and the In 4d, N 2s, Ga 3d, and Cs 4d semicore levels were studied as a function of Cs coverages...