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Zinc oxide (ZnO) cosputtered indium–gallium–ZnO (IGZO) and pure IGZO thin films have been deposited at room temperature by dual RF magnetron sputtering and annealed in argon (Ar), nitrogen (N2), and oxygen (O2) ambients. The beneficial effect of various annealing environments appears because of a reorganization of the amorphous network with controlling the defect chemistry in the films as systematically...
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