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Threshold voltage shift ($\Delta V_{\mathrm{ TH}}$ ) effect of hydrogenated amorphous silicon thin-film transistors under bipolar pulse bias stress (BPBS) is investigated. The dependence of the $\Delta V_{\mathrm{ TH}}$ effect on the signal pulsewidth, stress temperature, and negative pulse voltage magnitude of the BPBS is systematically measured, and explained by the charge trapping and detrapping...
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