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A novel electrostatic discharge protection device gate-grounded nMOS (GGnMOS) incorporated silicon-controlled rectifier (GGISCR) is proposed in this paper. With a distinguished feature of an imbedded floating P+ region, the GGISCR is demonstrated to be superior to the conventional low voltage triggered SCR and GGnMOS in terms of high area efficiency and high holding voltage. The operational mechanism...
Transmission Line Pulse (TLP) curve of high voltage SCR-LDMOS (SCR embedded in LDMOS) is measured under various repetitious TLP stress to evaluate its Electrostatic Discharge (ESD) protection capability. Results show that trigger voltage has walk-in behavior. TCAD simulation indicates its mechanism involved is explained by a base push-out effect dominated melt filament growth, that turns a robust...
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