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D022‐Mn3Ge has been studied recently for its large perpendicular magnetic anisotropy (PMA) and low magnetization, which enables it as a potential alternative material for the scaling of magnetic tunnel junctions (MTJs) used in spin‐transfer‐torque magnetic random access memory (STT‐MRAM). Most of the research was carried out on D022‐Mn3Ge deposited by molecular beam epitaxy (MBE) on single crystalline...