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C-doped Mn5Ge3 compound is ferromagnetic at temperature up to 430K. Hence it is a potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the Mn5Ge3/Ge interface could severely hinder the efficiency of the spin injection. To avoid these two phenomena we investigate the growth of Mn5Ge3 and C-doped Mn5Ge3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature...
The Curie temperature of Mn5Ge3 has been successfully enhanced by carbon doping. In this context the diffusion of a carbon thin film in Mn5Ge3 has been studied at room temperature. A value of the diffusivity of about D = 2.4 × 10‐23 ± 0.5 × 10‐23 m2 s‐1 is reported. This value is in the typical range of interstitial diffusion coefficients. Moreover Auger Ge and Mn peaks shifts and Ge3d core level...
I-V and C-V measurements performed on Au/Mn5Ge3/n-Ge structures, prepared for spintronic applications, are presented and analysed over a wide range of temperatures (50 K–300 K) with the goal of elucidating the prevailing conduction mechanism(s). The effects of image force lowering and recombination in the depletion region on the measured current are shown to be of little significance and cannot acceptably...
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