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We report the development of efficient AlGaN‐based deep ultraviolet (UV) LEDs emitting in the wavelength range from 320 nm to 265 nm by plasma‐assisted molecular beam epitaxy (MBE). By growing the AlGaN well layers under Ga‐rich conditions to produce strong band structure potential fluctuations, the internal quantum efficiency (IQE) of the quantum wells, which are used as the active region of the...
In this paper we present studies and compare the performance of UV electroabsorption modulators based on bulk GaN films and GaN/AlGaN multiple quantum wells. In both types of devices, the absorption edge at room temperature is dominated by excitonic effects and can be strongly modified through the application of an external electric field. We find that when similar active layer thicknesses and device...
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