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A sulfur‐annealing treatment was investigated to control the sulfur content of epitaxial CuInS2 films grown on GaAs substrate by PLD. The sulfur‐annealing treatment improved the surface roughness and film crystallinity. Photoluminescence measurements obtained using the confocal microspectroscopy demonstrated that the annealed films show band‐edge emissions over a very large area. Electron‐probe microanalysis...