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The effects of Zr composition on the crystallization behaviors and reliability characteristics of atomic-layer-deposited Hf1-x ZrxOy (0 ≤ x ≤ 1) gate-dielectric films are examined. n-Channel metal-oxide-semiconductor field-effect transistor (nMOSFET) devices with ZrO2 gate dielectrics showed a much smaller Vth shift under the positive bias stress compared with the same device with HfO2 gate dielectrics...
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